发明名称 |
Apparatus for atomic layer epitaxial growth |
摘要 |
An apparatus for carrying out atomic layer epitaxial growth of a thin semiconductor layer on a substrate surface has a cylindrical chamber in which a substrate holder is coaxially mounted so as to define an annular gap therebetween. The substrate holder can be in the form of a rotatable turbine wheel and a funnel-shaped hood introduces a reactant gas onto the substrate at an oblique angle.
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申请公布号 |
US4993357(A) |
申请公布日期 |
1991.02.19 |
申请号 |
US19880287903 |
申请日期 |
1988.12.21 |
申请人 |
CS HALBLEITER -UND SOLARTECHNOLOGIE GMBH |
发明人 |
SCHOLZ, CHRISTOPH |
分类号 |
H01L21/203;C30B23/08;C30B25/02;C30B29/40 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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