| 发明名称 |
Insulated gate bipolar transistor with improved latch-up current level and safe operating area |
| 摘要 |
A UMOS IGBT has a source electrode ohmic contact area which is at least 40% base region and preferably at least 50% base region in order to provide a high latching current and a large safe operating area.
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| 申请公布号 |
US4994871(A) |
申请公布日期 |
1991.02.19 |
| 申请号 |
US19880279392 |
申请日期 |
1988.12.02 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
CHANG, HSUEH-RONG;BALIGA, BANTVAL J. |
| 分类号 |
H01L29/06;H01L29/739 |
主分类号 |
H01L29/06 |
| 代理机构 |
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