| 摘要 |
PURPOSE:To manufacture a diffusion wafer at a low cost by reducing the thickness of silicon ingot which is sued to obtain one diffusion wafer. CONSTITUTION:By cutting and polishing silicon ingot, a lapped wafer 1 is obtained, whose thickness is about twice the conventional lapped wafer, and finally, two diffusion wafers 3 are manufactured from the one lapped wafer 1. When the lapped wafer 1 is obtained from the silicon ingot, the same cutting margin and lapping margin are prepared for one lapped wafer 1. In this case, the total of the cutting margin and the lapping margin for obtaining total lapped wafers may be one half as compared with the conventional method. As a result, the total of the cutting margin and the lapping margin required for obtaining the final diffusion wafer 3 from the initial silicon ingot is reduced. Thereby the diffusion wafer 3 can be manufactured at a low cost.
|
