| 摘要 |
"Semiconductor laser and method of manufacturing same". A semiconductor laser comprising a layer structure grown on a substrate region (1) having at least a first (2) and a second (3) passive layer of opposite conductivity types and an interposed active layer (4) as well as a currentlimiting blocking layer (9), which forms a reverse-biased pn junction with the adjoining region and bounds the active region. According to the invention, the active region (4A) of the active layer (4) has a larger thickness than that of the remaining part of the active layer and it extends through the blocking layer (9) at least as far as the first passive layer (2), while the active layer (4) has the same conductivity type as the substrate region (1). Fig. 1. |
