Method and structure for extracting lateral PNP transistor basewidth data at wafer probe

摘要

A method to extract at wafer probe the variation of lateral PNP basewidth of transistors formed in an integrated circuit which uses two lateral PNP devices having different and known basewidths before fabrication of the devices in the integrated circuit and then measuring the ratio of the saturation currents at wafer probe. The actual basewidth of the lateral PNP transistor is then related to the difference of the known basewidths of the two lateral PNP transistors and the ratio of the saturation measured currents thereof.