发明名称 Low temperature synthesis of high purity monoclinic celsian using topaz
摘要 A process for preparing monoclinic celsian from topaz and BaCO3, powders by heating an intimate mixture of the powders at a temperature of from 900 DEG C. to less than 1590 DEG C. in an atmosphere of the gases generated by the monoclinic celsian formation reaction itself.
申请公布号 US4994419(A) 申请公布日期 1991.02.19
申请号 US19900580012 申请日期 1990.09.07
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 TALMY, INNA G.;HAUGHT, DEBORAH A.
分类号 C04B35/195 主分类号 C04B35/195
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