| 摘要 |
PURPOSE:To remove a resist residue and correct the resist pattern without damaging the surface of the resist pattern by heating a wafer rapidly almost to the glass transition point of resist, carrying out the vapor deposition of the resist residue on the wafer surface and the shaping of the sectional shape of the resist pattern, and then quenching the wafer. CONSTITUTION:The wafer 1 where the resist is patterned is heated rapidly almost at the glass transition point of the resist from the rear of the wafer. Consequently, the resist residue 3 on the surface of the wafer 1 is fused and vaporized and the surface part 1A which is not patterned is cleaned. Resist 2 on the surface of the wafer, which is patterned is fused partially together with the resist residue 3 so that the sectional shape of the pattern varies. Consequently, the projection part 2A of the resist pattern 2 is corrected. The quenching is carried out so as to hold the sectional shape of the shaped resist pattern. |
