INSULATING GATE TYPE BIPOLAR TRANSISTOR,申请号JP19890172745-传众专利搜索

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发明名称	INSULATING GATE TYPE BIPOLAR TRANSISTOR
摘要
申请公布号	JPH0338066(A)	申请公布日期	1991.02.19
申请号	JP19890172745	申请日期	1989.07.04
申请人	FUJI ELECTRIC CO LTD	发明人	MIZUNO TETSUYA
分类号	H01L29/68;H01L29/739;H01L29/78	主分类号	H01L29/68
代理机构		代理人
主权项
地址

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