| 摘要 |
PURPOSE:To obtain pattern size after development as designed by making a mask size correction quantity to be added to designed size correspond to the pattern density of a mask and using a photomask with differs in density. CONSTITUTION:A pattern is formed by using the photomask which is different in mask size correction quantity to be added to the designed value between a high-density part and a low-density part. The pattern side which is nearly equal to the designed size is obtained after development with any pattern density of the mask. The difference between the pattern size after the development and the designed value due to a difference in pattern density is corrected individually and previously according to the pattern density. Thus, the pattern size is obtained as designated without being affected by the pattern density. |
