| 摘要 |
<p>PURPOSE:To enable a photodetective element to efficiently detect light emitted from a light emitting diode without deteriorating it in high speed response property by a method wherein an active layer is formed of InP or InGaAsP crystal, and the light emitting diode, whose emission light is in a wavelength range to which the photodetective element is very sensitive, is used. CONSTITUTION:A light emitting diode provided with an active layer of InP or InGaAsP whose emission wavelength is in a range of 900-1200nm and a photodetective element possessed of photosensitivity to a wavelength of 900-1200nm are provided. The light emitting diode is formed in such a structure that a Zn doped P-type InP layer 12, a Te doped N-type InP layer 13, and electrodes 14 and 15 are formed on a P-type InP substrate 11. It has an emission spectrum to which the photodetective element is very sensitive, and the photodetective element can detect light emitted from the light emitting diode two times or more as efficient as a conventional one.</p> |
