| 摘要 |
<p>PURPOSE:To markedly increase safety when compared with a CVD method by a method wherein, using a sputtering method for formation of a nitride film on a wafer substrate, the heating temperature of a wafer substrate is set within the specific range of the melting point (centigrade) of the nitride, and a chemically stabilized state is obtained. CONSTITUTION:When the melting point of a nitride, from which a film is formed, is set at Tm and the temperature when the film is formed is set at T, a pole-like structure in the temperature region of 0.1<T/Tm<0.3 is considerably ravelled out, and a temperature at which tensile strength will be increased can be present. A nitride film can be formed by conducting a magnetron sputtering method wherein a mixed gas formed by mixing argon and nitride into sputtering gas is used. As the melting point of boron nitride is 3000 deg.C, substrate temperature should be in the range of 300 deg.C to 900 deg.C. As the melting point of silicon is 1414 deg.C even when a film is formed on a silicon wafer, the silicon wafer itself is never melted in the above-mentioned temperature range.</p> |
