| 摘要 |
PURPOSE:To enable micronization of a semiconductor memory by forming the wiring, for connecting the gate electrode of a driving transistor with the source and drain regions of a transferring transistor, by the wiring at the layer upper than the gate electrode of the transferring transistor. CONSTITUTION:Wirings 27 and 28, which connect the gate electrodes 23a and 23b of driving transistors 14 and 15 with the source and drain regions 25a and 25b of transferring transistors 12 and 13, are made by the wirings at the layers upper than the gate electrodes 31 of the transferring transistors 12 and 13. Accordingly, the introduction of impurities into a semiconductor substrate 21 for forming the source and drain regions 25a and 25b of the transferring transistors 12 and 13 can be done without being checked by the wirings 27 and 28. For this reason, even if the wirings 27 and 28 are formed being shifted a little from the contact windows 26a-26d to the surface and drain regions 25a and 25b, there never occur such as case that the parts where impurities are not introduced are formed in the source and drain regions 25a and 25b and that the electrical conductivity is interrupted at these parts. |
