| 摘要 |
PURPOSE:To fix semiconductor wafers so as to be brought into contact in an accurate posture by a method wherein the semiconductor wafers where an impurity non-diffusion layer is formed in the central part and impurity diffusion layers are formed on both faces are arranged in parallel at the same intervals as backplates and are lowered onto the backplates and peripheraledge lower parts of the semiconductor wafers are pressurecontacted and fixed to the backplates by an own weight of the semiconductor wafers. CONSTITUTION:The surface of backplates P which have been arranged in a row and regulated is coated with an adhesive C; semiconductor wafers W are lowered onto the backplates P; the surface of the backplates P is brought into contact with the peripheral-edge lower part of the semiconductor wafers W via the adhesive C; the wafers are pressure-contacted and fixed to the backplates P by an own weight of the semiconductor wafers W. The semiconductor wafers W are brought into contact and fixed in an accurate posture in such a way that the backplates P are not moved, tilted and upset, dislocated or the like. As a result, when a fixation process has been finished, a shortage of a fixation strength and an error in a dimensional accuracy are not caused by a movement, a tilt and an upset, a dislocation or the like. Since the semiconductor wafers W are arranged on the backplates P, it is possible to prevent the adhesive C from flowing down to the side of the backplates P and the semiconductor wafers W from being contaminated even when the adhesive C flows out by a cause of its excess or the like.
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