| 摘要 |
PURPOSE:To obtain a high grade crystal structure which is low in crystal defects by forming a II-VI compound semiconductor layer on a III-V compound semiconductor having the composition ratio of Al that is more than the prescribed rate; besides, forming pn junction at the II-VI compound semiconductor layer. CONSTITUTION:First of all, a II-VI compound semiconductor layer containing n-type (or p-type) impurities performs an epitaxial growth with an MOCVD process and the like, for example, at a temperature higher than 620 deg.C on a III-V compound semiconductor having the composition ratio of Al that is 0.15 or more. Subsequently, p-type (or n-type) impurities are either diffused or ion-implanted on the II-VI compound semiconductor layer containing the n-type (or p-type) impurities or the II-VI compound semiconductor layer containing the p-type (or n-type) impurities performs the epitaxial growth with the MOCVD process and the like. Then, the II-VI compound semiconductor layer having pn junction is formed at the III-V compound semiconductor with either methods as mentioned above, and then a photosemiconductor device is manufactured. If the composition ratio of Al is 0.15 or less, a II-VI compound semiconductor which is superior in a crystalline character is not formed on the occasion of making the II-VI compound semiconductor grow on the III-V compound semiconductor containing Al. |
