| 摘要 |
PURPOSE:To reduce NG in alignment process, and improve the precision of mask alignment, by a method wherein a step-wise step-difference is formed by interrupting halfway etching of third exposing process and developing process, and repeating this. CONSTITUTION:For third exposing process, a pattern larger than the size at the time of second exposure is subjected to alignment exposure by using an alignment mark 15 formed by second exposing process, and developing and etching are repeated. At this time, since the size of an image pattern formed by first exposure is not changed, the alignment mark 15 is intermittently etched. It is possible to repeat the same process n-times, but the process is repeated, e.g. 3-times, thereby forming a step-wise step-difference in an aperture part 14. The side wall of the mark 15 is formed in a pattern having a vertical profile. |
