| 摘要 |
<p>PURPOSE:To relax stress in a semiconductor device to obtain a highly reliable semiconductor device resistant against mechanical and thermal stress by a method wherein thickness of second brazing filler metal for adhering both ends of a laminated chip and lead members is made thicker than that of first brazing filler metal for adhering semiconductor chips in the laminated chip. CONSTITUTION:Numerous semiconductor chips 1 are brazed by first brazing filler metal 2 to form a laminated chip 6 wherein the thickness of the first brazing filler metal 2 is 55mum. Lead members 4 are adhered to both ends of the laminated chip 6 via second brazing filler metal 3. The second brazing filler metal 3 is used to braze the laminated chip 6 and the lead members 4 at such temperature that the second brazing filler metal 3 is melted but the first brazing filler metal 3 is not melted. The thickness of the second brazing filler metal is 100mum. In addition end faces of the semiconductor chips 1 are coated by a surface protecting material 7 for stabilizing PN junction face ex posed on them and the external face is further enclosure-molded by a plastic coat 5.</p> |
