| 摘要 |
<p>PURPOSE:To sharply increase a gate insulating film in conductivity and to make it possible enough so as to obtain a thin film transistor adapted for improvement in yield by a method wherein the gate insulating film containing a chemical conversion film formed by anodizing gate electrode metal is made effectively thin at least at a part of a gate electrode. CONSTITUTION:An amorphous silicon thin film transistor a-Si TFT is formed on a glass board 1, where the TFT is an insulated gate field effect transistor provided with three electrodes, an Al gate electrode 13, a source electrode 10, and a drain electrode 11. A gate insulating film is composed of an anodic oxide film 14 of the Al gate electrode 13 and an SiN film 3. A semiconductor a-Si layer 6 constitutes a current path and n<-+> layers 7 brought into ohmic contact with the layer 6. Layers 8 and 9 are formed into two-layered structures composed of Cr and Al which serve as a source and a drain electrode respectively. In this TFT, most of a gate insulating film in contact with a channel is made small in thickness. Moreover, the gate insulating film concerned is made thick at least near either a source electrode or a drain electrode.</p> |
