发明名称 |
Dry etching method |
摘要 |
An article to be etched is contacted with a plasma of a mixed gas containing an etching gas and a film forming gas or a surface modification gas at a low temperature to effect the dry etching of the article, whereby the selectivity of etching can be made very high and the inclination angle of the side wall of pattern can be controlled at a desired level.
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申请公布号 |
US4992136(A) |
申请公布日期 |
1991.02.12 |
申请号 |
US19880223570 |
申请日期 |
1988.07.25 |
申请人 |
HITACHI, LTD. |
发明人 |
TACHI, SHINICHI;TSUJIMOTO, KAZUNORI;OKUDAIRA, SADAYUKI |
分类号 |
H01L21/302;H01L21/306;H01L21/3065;H01L21/311;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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