| 摘要 |
PURPOSE: To limit a relief metal connection structure by treating to avoid induc ing the dimensional change after laminating and etching steps. CONSTITUTION: On a substrate 11 conductive pads 17, a dielectric film insulator 11 and a mask layer 23 are formed, and the insulator 11 and the mask layer 23 are molten away to form passages 27 to the pads 17. Here, the etching and laminating processes tending to induce the dimensional change end, and etching circuit is covered with the insulator 11. On the insulator 11 a conductive material is inserted to fill up part of the passages 27, the mask layer 23 is removed to form an interconnection structure. This layer 23 and the insulator 11 are molten away by a laser 25 to realize a fine structure and elevate the interconnection density. Thus, it is possible to limit a relief metal connection structure, construct it and avoid the inaccuracy and deterioration. |
