| 摘要 |
PURPOSE:To reduce electrode contact area and improve optoelectric conversion characteristics by forming a resist film on the surface of a semiconductor layer or film and printing metal paste over an opening formed through etching in this resist film. CONSTITUTION:An n<+> diffusion layer 2 is formed on a P-type Si substrate 1, and an SiO2 passivation film 4 is formed thereon, and a rear side electrode 3 is formed on the substrate 1. Then, resist is applied onto the film 4 to form a resist film 6, and an opening for an electrode pattern 16 is formed by photoetching. Thereafter, patterning of the film 4 is carried out to provide an opening part 14 having the same area as that of the opening 16. Next, silver paste 5 is screen printed so that the opening part 14, 16 are covered and the paste 5 is brought into contact with the layer 2, then dried, and heat treated, and a surface electrode 5 having a T-shaped cross-section is formed through baking, and at the same time the film 6 is removed by thermal decomposition. Thus, contact area of the electrode 5 with respect to the layer 2 can be made very small. |
