| 摘要 |
PURPOSE:To make occupancy area small so as to contribute to the high integra tion of an integrated circuit by forming a transistor vertically at the side face of a thin silicon layer formed in projecting form on an insulator such as a silicon oxide, etc. CONSTITUTION:A silicon oxide film is formed on a silicon substrate 1, and a mask is put on a part to become a projection, and the film 2 is etched. Next, polysilicon is accumulated, and a silicon film 3 is formed, and impurities for control of threshold voltage are implanted into the side face of the projection by oblique ion implantation, and heat treatment is applied so as to recover the crystal defects at the surface of the film 3. Next, a gate oxide film 5 is formed, and by ion implantation source and drain diffusion layers 31, 32, and 33 are formed. Next, the polysilicon is etched back with the surface of the film 5 as a terminal. Thereupon, the polysilicon accumulated at the side face of the projection remains without being etched. These are made gate electrodes 61 and 62. Next, a mask is put, and the film 5 is removed, and those are made source electrodes 41 and 42 and a drain electrode 7. Hereby, it can be highly integrated. |
