| 摘要 |
PURPOSE:To achieve the high performance and the high quality of an amorphous solar battery by repeating a film forming step for a thin film wherein the quantity of bonded hydrogen is a specific value or less and a reforming step for exposing the film in the atmosphere of atomstate hydrogen, and forming a semiconductor thin film. CONSTITUTION:A thin-film forming apparatus comprises a film forming chamber 1 and a reforming chamber 2. A substrate 10 which is fixed with a conveying device is reciprocated between both chambers, and the film forming and reforming are repeated. In the film forming step, a target which does not incorporate hydrogen is used. A thin film wherein the quantity of bonded hydrogen is 10atom% or less and which has the thickness of 3-1,000Angstrom is formed by high- frequency sputtering. In the reforming step, a gas stream containing atom-state hydrogen is introduced into the chamber 2. The thin film formed on the substrate 10 is exposed in the atmosphere of the atom-state hydrogen, and 1 the reforming is performed. Said steps are repeated by the specified times. Thus the intended semiconductor thin film is formed. In this way, the high performance and the high quality of the amorphous solar battery can be achieved. |
