| 摘要 |
PURPOSE:To provide a small loss, high response rate, low operating voltage and small size by adopting a multiple quantum well structure for a optical waveguide layer and constituting the optical waveguide of plural II-VI compd. semiconductor layers. CONSTITUTION:The region where an alternate long and short dash line connecting AA' of a central part, i.e. the region (crossing part) where the optical waveguides cross each other is constituted by forming the III-V compd. semiconductor optical waveguide layer 101 having the multiple quantum well structure in place between the III-V compd. semiconductor clad layers 102, 103 having the refractive index smaller than the refractive index thereof and has an electrode 204 for electrode control in the uppermost part. The rib region at the center, i.e. the circumference of the voltage control part is embedded by the II-VI compd. semiconductor. On the other hand, the optical waveguide is constituted by forming the II-V compd. semiconductor optical waveguide layer 105 having the large refractive index inplace between the II-VI compd. semiconductor layers 106, 107 having the large refractive index. The II-VI compd. semiconductor clad layer 107 on the optical waveguide layer 105 is subjected to patterning to the shape of the optical waveguides. |
