发明名称 Method for producing semiconductor thin film by melt and recrystallization process
摘要 A method for producing a semiconductor thin film by melt and recrystallization process. At least one recess is formed in a stacked layered structure including a semiconductor thin film layer. The recess has an arrow head shape seen from a surface side of the layered structure. The apex of the arrow head shape is oriented to a forward direction on a scanning line. The surface of the layered structure is covered with a cooling medium so that the recess is filled with the cooling medium. An energy beam is irradiated to the layered structure through the cooling medium to scan the structure along the scanning line so as to melt the semiconductor thin film and after that the semiconductor is cooled and recrystallized to form a single crystal structure therein.
申请公布号 US4992393(A) 申请公布日期 1991.02.12
申请号 US19900529248 申请日期 1990.05.25
申请人 RICOH COMPANY, LTD. 发明人 KOSAKA, DAISUKE;KONISHI, JUNICHI
分类号 H01L21/20;H01L21/762 主分类号 H01L21/20
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