Dry etching method and method for prevention of low temperature post etch deposit

摘要

A method of preventing low temperature dry etch deposit on a semiconductor substrate wafer comprises: ceasing injection of reactive gas to within a dry etching reactor at substantial completion of a selective etch while maintaining sufficient power to the reactor to maintain gases therein in a plasma state; and substantially evacuating the reactive gas plasma from the reactor before decreasing power to the reactor below that which is sufficient to maintain gases therein in the plasma state.