| 摘要 |
PURPOSE: To obtain a semiconductor laser mirror having a very flat and smooth horizontal surface by forming a laminate having a stripe waveguide having a broad terminated end on a wafer, and anisotropically etching a mirror face across the broad terminated end so that only a short part thereof is shallow. CONSTITUTION: A positive resist is applied on an active layer 31 of a laminate, exposed through a laser ridge pattern, developed to form a patterned photo resist 32 having thin parts 32.1 and broad parts 32.2, and ridges 33 along a 0-pattern of the photo resist. Anisotropic etching forms grooves 39 of the mirror face into the ridge 33 surface, with leaving self-aligned separated contact stripes only. A mask 37 for etching the grooves 39 is formed. By a Cl2 /Ar-CAIBE process using Ar and Cl, the grooves are etched, and hard baked resist 37 is removed by ashing in an O-plasma. |
