| 摘要 |
PURPOSE:To perform high-speed treatment by liquefying a reaction gas on the surface of a substance to be treated after cooling the substance to be treated up to a temperature that is lower than a condensation temperature of the reaction gas and then, giving prescribed treatment to the substance to be treated width liquid that is obtained by liquefying the gas. CONSTITUTION:A substance 2 to be treated is cooled up to a temperature at which a prescribed reaction gas is liquefied on the surface of the substance to be treated and the substance 2 to be treated is treated by liquid that is obtained by liquefying the reaction gas. For example, in a reaction chamber 1 for ashing, a mounting table 3 is cooled by a cooling device 5 up to the condensation temperature of ozone, i.e., a temperature that is lower than -111.9 deg.C and then, the temperature of the surface of a semiconductor wafer 2 is cooled up to the condensation temperature and, when ozone is generated by an ozone apparatus 10 and its apparatus makes ozone blow off toward the substrate of the semiconductor wafer 2 and the like, ozone becomes liquid as soon as it reaches the surface of the semiconductor wafer 2. Liquefied ozone acts on organic substances, i.e. a resist and the like and then, these organic substances are removed by performing ashing of them. Liquefied ozone exhibits a highly excellent reactivity and enables this device to perform high speed ashing. High-speed treatment is thus performed. |
