| 摘要 |
PURPOSE: To obtain a method of doping a group II-VI compound with a V group dopant for performing p-type doping using an ordinary MBE apparatus by forming a MBE fluid flux with an assembly of a group V dopant and a group II material. CONSTITUTION: In a method of p-type doping a substrate 24 formed with an assembling of at least one group II material selected among a group comprising Zn, Cd, Hg, and Mg and a group VI material selected among a group comprising S, Se, and Te, a fluid flux is formed from a combination of a group II material selected among a group comprising Zn, Cd, Hg, and Mg and a group V material selected among a group comprising As, Sb, and P, and the fluid flux is supplied to the substrate 24 at low pressure of about 10<-6> . For example, when an ordinary MBE chamber 8 is used and HgCdTe is epitaxially grown, Cd3 As2 is used as a material as a dopant material heated with a current from a power supply 20 in a fourth crucible 18 for producing a dopant fluid flux. |
