| 摘要 |
PURPOSE:To make it possible to enhance the accuracy in shape of a pattern by a method wherein the internal stress of the film of an X-ray absorbing substance is reduced, it is thermally stabilized, the positional accuracy of pattern is enhanced, and the selective ratio of etching with a resist is made sufficiently larger by implanting argon ions into the film of the X-ray absorbing substance. CONSTITUTION:A membrane 2 is formed on a substrate 1, a film 3 of X-ray absorbing substance, consisting of heavy metal, is formed on the membrane 2, and when an X-ray exposing mask is manufactured by selectively etching the film 3 of X-ray absorbing substance, a process in which an argon ions are implanted into the film 3 of X-ray absorbing substance is provided. For example, an SiC membrane 2 is formed on the silicon substrate 1, and after a tantalum layer 3 has been formed thereon, argon ions are implanted into the tantalum layer 3. Then, a supporting frame 4, consisting of SiC ceramic, is installed on the outer circumferential part on the rear of the substrate 1, and after an X-ray exposing mask blank 5 has been formed by removing the exposed part of the substrate 1 by etching, a pattern 31 corresponding to the pattern 61 of the resist mask 6 is formed on the tantalum layer 3. |
