| 摘要 |
PURPOSE:To make carriers uniform in distribution so as to obtain a muliple quantum well light emitting element excellent in characteristics by a method wherein donors and acceptors are partly added to the P-clad layer side and the N-buffer layer side of a semiconductor thin film which constitutes an active layer respectively. CONSTITUTION:An N-InP buffer layer 2, a muliple quantum well active layer 3 composed of an InGaAs well layer 4 and an InP barrier layer 5, and a P-InP clad layer 6 are successively laminated on an InP substrate 1, and then a P- electrode 7 and an N-electrode 8 are provided to the P-InP clad layer 6 and the rear side of the substrate 1 to form a light emitting element. Moreover, donors are wholly added to the part of the active layer 3 close to the clad layer 6 and acceptors partly added to the part of the active layer 3 close to the buffer layer 2. |
