发明名称 MAKING METHOD FOR SEMICONDUCTOR DEVICE
摘要 A method of manufacturing a semiconductor substrate comprises a first step of preparing one hundred silicon bodies each having two silicon wafers held together by cohesion after polishing and heating processes. The method further comprises a second step of stacking the silicon bodies in their thickness direction to form a stacked body, and a third step of cylindrically grinding the side surface of the stacked body by a predetermined amount.
申请公布号 KR910000792(B1) 申请公布日期 1991.02.08
申请号 KR19860009433 申请日期 1986.11.08
申请人 TOSHIBA CORP. 发明人 NOMURA TAEHIKO;NATSUME YOSINORI;HOSOKI YOSINORI
分类号 B24B9/06;H01L21/02;H01L21/18;H01L21/20;H01L21/208;H01L21/304;H01L29/06;(IPC1-7):H01L21/00 主分类号 B24B9/06
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