发明名称 |
MAKING METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor substrate comprises a first step of preparing one hundred silicon bodies each having two silicon wafers held together by cohesion after polishing and heating processes. The method further comprises a second step of stacking the silicon bodies in their thickness direction to form a stacked body, and a third step of cylindrically grinding the side surface of the stacked body by a predetermined amount. |
申请公布号 |
KR910000792(B1) |
申请公布日期 |
1991.02.08 |
申请号 |
KR19860009433 |
申请日期 |
1986.11.08 |
申请人 |
TOSHIBA CORP. |
发明人 |
NOMURA TAEHIKO;NATSUME YOSINORI;HOSOKI YOSINORI |
分类号 |
B24B9/06;H01L21/02;H01L21/18;H01L21/20;H01L21/208;H01L21/304;H01L29/06;(IPC1-7):H01L21/00 |
主分类号 |
B24B9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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