| 摘要 |
PURPOSE:To obtain a highly stable thin film efficiently by performing repeatedly manufacturing processes through which a semiconductor thin film consisting of 10at.% or less bound hydrogen is formed and its thin film is exposed to a discharge atmosphere containing a reaction gas. CONSTITUTION:A semiconductor thin film is formed by performing repeatedly a film formation process 1 through which the semiconductor thin film consisting of 10at.% or less bound hydrogen is formed and a film-reforming process 2 through which the thin film is exposed to a discharge atmosphere containing a reaction gas. Then, film formation conditions when a great quantity of hydrogen not exist in an atmosphere are selected so that the quantity of bound hydrogen in the semiconductor thin film is 10at.% or less, especially it is preferable to be 3at.% or less. Further, the thickness of the semiconductor thin film which is formed at a time among repeating processes is defined to 3-1000Angstrom and, for example, such an operation is repeated 40 times to form thin films. lt is preferable for a film formation temperature to be determined by making its temperature conform to the reforming process 2. Then, repeating time of both processes 1 and 2 is exceedingly shortened by adopting film-formation means so that basically the temperature of respective processes is determined without relying upon materials. A highly stable thin film is thus obtained efficiently. |
