发明名称 SEMICONDUCTOR STORAGE CIRCUIT
摘要 <p>PURPOSE:To expand the readout margin by providing an amplifier circuit receiving a signal of a readout latch circuit provided to the output side of a capacitance cut-off MOSFET, amplifying the signal and delivering the result to a gate of the capacitance cut-off MOSFET. CONSTITUTION:A readout signal from a data line D1-n through capacitance cut-off MOSFETsQ1-n provided in series with the selected data line D1-n is amplified by a readout latch circuit LAT including an amplifier circuit and delivered to a gate of the capacitance cut-off MOSFETQ1-n to apply switch control. The output level of the capacitance cut-off MOSFETsQ1-n is discriminated in this way to apply switch control to the capacitance cut-off MOSFETsQ1-n thereby recovering the high level notch of the data line D1-n with the latch circuit LAT, then the level margin is expanded.</p>
申请公布号 JPH0330194(A) 申请公布日期 1991.02.08
申请号 JP19890163956 申请日期 1989.06.28
申请人 HITACHI LTD 发明人 KUBOTA HIROSHIGE
分类号 G11C17/00;H03K19/177 主分类号 G11C17/00
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