| 摘要 |
PURPOSE:To form an extremely good photoconductive layer easily on a substrate by mixing >=2 kinds of silicon compds. of the specific formula at specific ratios and mixing these with materials contg. carbon atoms, thereby constituting a raw material for formation of photoconductive layers. CONSTITUTION:A raw material for formation of photoconductive layers is constituted of a material consisting of carbon atoms as constituting atoms, and at least 2 kinds of the compds. expressed by the formula SimHlXk (m, k are positive integers, l is 0 or a positive integer, l+k-2m+2, X is halogen atom). The compds. of the formula are such that with respect to the compds. of the lowest order of (m), for example, SiF4, SiCl4, the compds. of (m) of higher order than this, for example, Si2F6, Si2Cl6 are mixed at >=1vol%, more preferably >=5vol%. There are, for example, methane, ethylene, acetylene, etc. as the material contg. carbon atoms, and these are mixed at about <=15vol% based on the vol. of the compds. of the formula. Such raw material is introduced in a gaseous state into a deposition chamber, the pressure wherein is kept decreased, whereby electric discharge is caused, and a photoconductive layer is formed over a wide area on a substrate. |
