| 摘要 |
PURPOSE:To improve photoelectric conversion efficiency by forming a window side impurities layer in a multilayer structure of an amorphous silicon layer (fine crystalline layer) including a fine crystal and an amorphous silicon nitride layer (hetero layer) and by specifying the film thickness of the window side impurities layer. CONSTITUTION:A substrate 1 which is equipped with a transparent electrode 2 in texture structure is adopted, a window side impurities layer is in multilayer structure of an amorphous silicon layer (fine crystalline layer) 4 including a fine crystal and an amorphous silicon nitride phase (hetero layer) 3, and the window side impurities layer is formed in film thickness exceeding 100Angstrom , thus reducing light absorption by the window side impurities layer, achieving a light confinement effect with the texture structure at the transparent electrode 2, and achieve a conversion efficiency without reducing opening voltage and fill factor. |
