| 摘要 |
<p>A process for fabricating semiconductor devices such as MOS integrated circuits, in which a plurality of diffusion layers formed by doping a substrate with impurities at high concentration are connected together using a high-melting metal silicide. A silicon layer (108) under a non-doped layer is formed on the substrate (100) to be processed, and a high-melting metal layer (109) is formed on the silicon layer (108). The high-melting metal layer (109) is reacted with the silicon layer (108) to form the high-melting metal silicide (112) that connect the diffusion layers together. Thus, the high-melting metal silicide layer (112) can be stably formed suppressing the junction leakage as low as possible.</p> |
