SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To reduce a gate-drain capacitance, to obtain a high gain up to a high frequency and to reduce a noise by a method wherein a thickness of a protective film which is situated at a gate electrode and at an active region of a transistor near the electrode is made thinner than a thickness of a protective film at an inactive region of the transistor where a source lead-out electrode, a gate lead-out electrode and a drain lead-out electrode are situated. CONSTITUTION:A thickness of a protective film 17 which is situated at a gate electrode 8 and at an active region of a transistor near the electrode is made thinner than a thickness of a protective film at an inactive region of the transistor where a source extraction electrode, a gate lead-out electrode and a drain lead-out electrode for wire-bonding use are situated. Thereby, a gate-drain capacitance Cgd which is formed between the gate electrode 8 and a drain electrode 6 can be reduced; a gain in a high frequency can be enhanced. Noise which has been produced at the output side is not returned to the input side via the gate-drain capacitance Cgd as a feedback capacitance; the noise can be reduced.