Three-dimensional integrated memory.

摘要

A three-dimensional integrated memory which integrates a plurality of multi-layer memory elements (30a) each being composed of alternately laminated conductive films and tunnel switch films in matrix formation on an XY plane. X- and Y-decorders (32, 34) select optional multi-layer memory elements one by one from the plurality of multi-layer memory elements, and output data signals to the selected multi-layer memory elements respectively. A plurality of interfaces (37) are respectively set to one-ends of the integrated multi-layer memory elements on the identical side, and includ capacitors (Cd) for storing the data signals, a signal (WRT) simultaneously writes data signals stored in the capacitors into the plurality of multi-layer memory elements.