| 摘要 |
<p>1,158,120. Semi-conductor devices. DANFOSS A.S. 14 Oct., 1966 [9 Nov., 1965], No. 46074/66. Heading H1K. A diode consists of a semi-conductor body clamped between two electrodes each of which forms a Schottky barrier with it. The preferred arrangement with two pairs of back to back Zener diodes in series is formed by assembling a double sandwich consisting of gallium arsenide bodies 11, 12, Fig. 1, and graphite members 12, 13 and 14 and holding it under pressure while the ends of an enclosing glass tube are sealed over the shoulders of end members 13, 14. The use of silicon and indium phosphide as semiconductors and molybdenum and silver for the electrodes is also suggested.</p> |
