Crystal grain diffusion barrier structure for a semiconductor device,申请号US19890337999-传众专利搜索

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发明名称	Crystal grain diffusion barrier structure for a semiconductor device
摘要
申请公布号	US4990997(A)	申请公布日期	1991.02.05
申请号	US19890337999	申请日期	1989.04.14
申请人	FUJITSU LIMITED	发明人	NISHIDA, KENJI
分类号	H01L21/768;H01L23/532	主分类号	H01L21/768
代理机构		代理人
主权项
地址

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