| 摘要 |
In a method of fabricating thin film field effect transistor array by forming gate bus lines and drain bus lines in the form of a matrix on a light transmissive insulating film, forming thin film field effect transistors in the vicinity of each crossing point of the gate bus lines and the drain bus lines, and connecting pixel electrodes to each of the thin film field effect transistors, the method of fabricating the thin film field effect transistor array in accordance with the present invention includes the step of forming a gate electrode, the pixel electrode, and the drain bus line consisting of a transparent conductive film and a first metal film, or exclusively of the transparent conductive film, on the light transmissive insulating substrate, the step of forming a laminated film consisting of a gate insulating film, an amorphous silicon layer, and an n-type amorphous silicon layer, covering at least the gate electrodes, and the step of forming the gate bus lines, source electrodes, and drain electrodes consisting of a second metal film.
|
