| 摘要 |
PURPOSE:To obtain high emitting efficiency and high uniformity of light emission by forming a light emitting layer of a superlattice layer and doping impurity at the part of the layer. CONSTITUTION:An N-type GaAs buffer layer 12, an N-type superlattice layer 14 and an N-type GaAs protective layer 16 are sequentially laminated on an N-type GaAs substrate 10 by an MBE method. With an SiN film 18 as a mask Zn of impurity is doped to be diffused, a superlattice structure is broken to be disordered, a boundary between an insular P-type diffused mixed region 20 and the layer 14 is formed with a PN single hetero junction face to become a light emitting element. After the region 20 is formed, a P-type electrode 22 and an N-type electrode 24 are deposited, and the P-type electrode is patterned in a desired shape together with elements by a photolithography. Further, it is nonreflection coated with an SiON film 26, the film 26 is removed in a predetermined region, a bonding pad of the electrode 22 is formed, heat treated to form ohmic contacts of the electrodes 22, 24. |
