| 摘要 |
PURPOSE:To hold a substrate temperature during thin film processing at a desired temperature and to acquire a high quality thin film by measuring an amount of heat injected to a substrate and by controlling a pressure or a flow rate of fluid which is introduced between the substrate and a substrate holding member corresponding to the heat amount. CONSTITUTION:A water path 19 which allows constant temperature water to pass is provided to a substrate holding member 10 of good heat conductivity, and argon gas 14 is introduced to clearance between the member and a substrate 9. Temperature of the substrate 9 and the member 10 is detected by a temperature through the gas 14. A heat amount sensor 3 is provided to a central part of the member 10 to measure an amount of heat which is injected to the substrate 9. When thin film processing is carried out by injecting particle or photon, an incident heat amount is measured by the heat amount sensor 3, temperature of the substrate 9 and the member 10 is measured by a monitor, and a pressure of a flow rate of the gas 14 is controlled to hold a temperature of the substrate 9 at a desired temperature. Thereby, a high quality thin film can be acquired. |
