| 摘要 |
Apparatus for producing thin film materials in a plasma deposit process. An enclosure is provided including a plasma zone. The apparatus removes non-deposited, residual gaseous reagents from the enclosure after heating the plasma zone for a predetermined time. An airtight chamber surrounds the enclosure and is kept at a pressure lower than the pressure within the enclosure. A screen is provided for directing heat to the enclosure, while maintaining the chamber walls at a lower temperature. In one embodiment of the invention, metal bellows are provided to apply a substrate support plate against a side wall of the enclosure sealing the substrate support with one of the side walls of the enclosure.
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