发明名称 INTEGRATED SEMICONDUCTOR DEVICE
摘要 PURPOSE: To enable optical control by providing the device with multiple layers having a DIN structure formed by constituting an intrinsic region I with waveguides consisting of multiple quantum wells as a directional coupler structure. CONSTITUTION: A substrate 10 is provided thereon with a first light confinement layer 1, the first optical waveguide G1 consisting of a material 2, a sepn. layer 3, the second optical waveguide G2 consisting of a material 4 and a second light confinement layer 5. The first confinement layer 1 is formed as an n-type, the material 2 forming the first optical waveguide G1 as an n-type and the sepn. layer 3 as an n-type. The material 4 forming the second optical waveguide G2 is made to correspond to the intrinsic region I constituted of multiple quantum wells. The second confinement layer 5 is formed as a p-type. Further, the junctions N and P disposed at the p-type layer 5 and the n-type layer 1 are provided with an electric circuit for reverse biasing the contact of a PIN diode therebetween. The PIN structure is reverse biased, and a feedback is generated therein so that the switching from one state to the other state is initiated by a change in the level of a light powerϕ1 implanted into the input waveguide G1 . As a result, the optical control is made possible.
申请公布号 JPH0325420(A) 申请公布日期 1991.02.04
申请号 JP19900148823 申请日期 1990.06.08
申请人 PHILIPS GLOEILAMPENFAB:NV 发明人 JIYANNARISUTEIDO BABAIIYU
分类号 G02B6/122;G02B6/12;G02F1/017;G02F1/313;G02F1/35;G02F3/02 主分类号 G02B6/122
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