| 摘要 |
PURPOSE:To reduce a reverse wet current and to stabilize reverse characteristics by controlling the temperature of a semiconductor substrate in a specific range when an aluminum layer is laminated on a barrier metal layer by depositing. CONSTITUTION:An annular P-type layer 13 is formed as a guard ring on the surface of a silicon substrate 1 in which an N-type layer 12 is epitaxially grown on an N<+> type base plate 11. After the surface provided with the ring 13 is covered with an oxide film 2, an opening is opened inside from the center of the ring, and Mo is deposited as a barrier metal layer 3. Further, an Al electrode layer 4 is deposited thereon. When an aluminum layer is deposited on the barrier metal layer, the temperature of a semiconductor substrate is controlled to a range of 210-270 deg.C. The layers 3 and 4 are, after all the surfaces are deposited, so patterned that a peripheral edge is provided above outside the ring 13. |
