MANUFACTURE OF DYNAMIC STORAGE DEVICE

摘要

PURPOSE:To enhance the characteristics of switching MOS transistor as well as the holding characteristics of stored information by a method wherein the whole memory cell matrix array is covered with a mask and then implanted with an impurity ion to form source.drain. CONSTITUTION:The whole memory cell matrix array covered with a mask 14 is implanted with an impurity ion to form n<+> regions for source.drain thereby eliminating the implantation of the same in a gate electrode of a switching MOS transistor furthermore without forming n<+> regions on a substrate so that the said whole array may be kept in the low concentration diffused regions as they are equivalent to the n<-> regions 6 by the impurity ion implantation of LDD structured transistor. Through these procedures, the n<+> impurity ion implanted in the source.drain does not penetrate into the gate of the switching MOS transistor thus forming no n<+> diffused layers in the channel regions so as to avoid the deterioration in the transistor characteristics. Furthermore, the damage to the substrate due to ion implantation is lessened while the leakage of capacitor accumulated charge to the substrate is notably reduced thereby enabling the holding characteristics of stored information to be enhanced.