MANUFACTURE OF DIAMOND ELECTRONIC DEVICE

摘要

PURPOSE:To increase the light emitting efficiency by a method wherein a thin film type diamond is formed on a semiconductor substrate and then a semiconductor is provided between an electrode arranged on the diamond and the diamond having low resistant light emitting region. CONSTITUTION:A diamond 2 is provided on a semiconductor substrate 1; a semiconductor 3 comprising single layer or multilayers of silicon carbide cr silicon is provided on the surface of the diamond 2; and a metallic electrode 7 after strip type, comb type pattern is provided on the semiconductor 3. An impurity is implanted in the diamond region excluding the electrode 7 by ion implantation process etc. using the electrode 7 as a mask controlling voltage in alignment further performing the annealing process. This impurity added region i.e. the impurity region 5 will be a light emitting region. Through these procedures, the pulse voltage of 60V is impressed and visible light is emitted to be externally radiated without any obstruction through a reflection preventive film thereby attaining to high brightness.