| 摘要 |
PURPOSE:To prevent the growth of unnecessary products by a method wherein microwave is irradiated at a processed substance and only the processed substance or only a part of the processed substance is heated to permit heating for the raw material manufacturing a semiconductor element which is the processed substance and reactant only. CONSTITUTION:A semiconductor wafer 2 is mounted on a wafer supporting base 3 and microwave 4 is generated from a microwave generating section 5 and the microwave is irradiated in a processing chamber 1 by utilizing a microwave transmission section 6. The semiconductor wafer 2 is heated up to a predetermined temperature by the irradiated microwave 4. When the semiconductor wafer 2 is heated up to a predetermined temperature, reactive gas 7 required for the growth of a semiconductor protection film is supplied in the processing chamber 1 from a reactive gas supply section 8. |
