发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To increase the read speed of a large-capacity memory by providing a sense amplifier, which amplifies the signal of a bit line, on the input side of a column decoder which selects word lines. CONSTITUTION:Sense amplifiers SA0 to SA4095 are provided on the input side of column decoders CDEC0 to CDEC7 correspondingly to individual bit lines (BL). When a specific word line (WL) is selected by a row decoder RDEC, signals of memory cells placed at intersections between the WL and individual BLs are amplified by sense amplifiers SA0 to SA4095 and are read out to the input side of column decoders CDEC0 to CDEC7. When BLs are switched by column decoders CDEC0 to CDEC7, signals of BLs are read out to the output side of column decoders CDEC0 to CDEC7, therefore, signals of individual BLs are read out as output data D0 to D7 to the external through output buffers OB0 to OB7. Thus, the read speed of the large-capacity memory is increased.</p>
申请公布号 JPH0323596(A) 申请公布日期 1991.01.31
申请号 JP19890157905 申请日期 1989.06.20
申请人 FUJITSU LTD 发明人 TAKEMAE YOSHIHIRO
分类号 G11C17/00;G11C7/06;G11C16/06 主分类号 G11C17/00
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